To many, the sell-by date on the carbon nanotube-based non-volatile random access memory (NRAM) developed by Nantero has long since passed. IEEE Spectrum characterized the technology as a “loser” nearly a decade ago after several of the company’s launch dates came and went with hardly a whimper.
The technology’s promise was that it could lend itself to easy mass production because it relies on a group of nanotubes deposited randomly on a substrate rather than individual nanotubes precisely placed. By eliminating the need for individual placement, Nantero hoped to sidestep the main bugbear of nanotubes in electronics: purity. It turns out purity could not be sidestepped to the degree originally believed, and a decade-and-half of disappointment ensued.
But a new analyst report published by BCC Research asserts that NRAM’s ship may have finally come in. The upshot: It (and a host of other non-volatile memory approaches) may be poised to dislodge flash from its long-held throne.