The end appears nigh for scaling down silicon-based complementary metal-oxide semiconductor (CMOS) transistors, with some experts seeing the cutoff date as early as 2020.
While carbon nanotubes (CNTs) have long been among the nanomaterials investigated to serve as replacement for silicon in CMOS field-effect transistors (FETs) in a postsilicon future, they have always been bogged down by some frustrating technical problems. But, with some of the main technical showstoppers having been largely addressed—like sorting between metallic and semiconducting carbon nanotubes—the stage has been set for CNTs to start making their presence felt a bit more urgently in the chip industry.
Peking University scientists in China have now developed carbon-nanotube field-effect transistors (CNT FETs) having a critical dimension—the gate length of just 5 nanometers—that would outperform silicon-based CMOS FETs at the same scale. The researchers claim in the journal Science that this marks the first time that carbon-nanotube CMOS FETs under 10 nanometers have been reported.